SKU:85777151359
GaN , N-type , Si doped (0001) 10x10.5x0.35mm,2sp
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
GaN , N-type , Si doped (0001) 10x10.5x0.35mm,2spGaN single crystal substrates is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. The large growth rate enables the growth of self supporting wafer thicknesses in a convenient time period. Specifications of the Substrate Orientation: c axis (0001) + 1. 0 o Nominal Thickness 350+ 25 microns Dimension: 10 mm x 10. 5 mm + 0. 5 mm Bow <5
It is excellent to make High Tc syperconduct SQUID
Accuracy: ±(0
Density: 5
YSZ Mixing Balls( (Optional)
Constant Resistance Discharging
Orientation: Radom
Click the picture below to see how to place the spacer and spring into button case:
Warning: You must pay great attention to die change from one size to another
User-friendly Computer control interface can easily program heating steps
NRTL certification is available upon request at extra cost
Laser cut edges
3 nm(by AFM)
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