SKU:89577968300

Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 2SP Resistivity: 1-5 ohm.cm

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Regular price $181.67 USD
Regular price $228.67 USD Sale price $181.67 USD
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18

Description

Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 2SP Resistivity: 1-5 ohm.cmGe Wafer Specification Growing Method: CZ Orientation: (110) + _0. 5 Deg Wafer Size: 2" dia x 500 microns Surface finish (RMS or Ra) : Two sides optical polished < 30A Doping: Sb doped Conductor type: N type Resistivity: 1 5 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 A Density:

If using one jar

4 inch dia SiO2/ Si wafer (Prime Grade)

Loading Current: 3A

250ml SS304 Jar

To build a DIY electrospinning system

7826Kcal/h

Coercivity:                             84 Oe

8x25ml Hi-throughput Jar

Orientation: C-axis[0001]( +/-0

Lithium Solid State or Li-ion half cell will be assembled

Install digital pressure gauge & controller on the tube flange

Processing Tube  Separately) & Tube Adapter

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