GaN (0001) 10x10.5x0.35mm,2sp ,Semi-insulating

GaN (0001) 10x10.5x0.35mm,2sp ,Semi-insulatingGaN single crystal substrates is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. The large growth rate enables the growth of self supporting wafer thicknesses in a convenient time period. Specifications of the Substrate Orientation: c axis (0001) + 1. 0 o Nominal Thickness 350+ 25 microns Dimension: 10 mm x 10. 5 mm + 0. 5 mm Bow <5

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Please bake the powder in a vacuum oven at 120 - 150 °C before making slurry and coating to ensure max

Please browse our FH-60 for a large furnace fume hood solution

One pack of 12123 accessories

Please choose two side for extra $20 cost

94mm Flatness =  0

Model  EQ-Die-60D Die Sleeve Height   2 3/8" (60 mm) Inside Diameter   2 3/8" (60 mm) Outside Diameter   3 3/4" (101mm) Weight  20 Lbs

Application Notes You can insert your own screen into the middle frame to quick exchange screen stencil

Four jar holders and clamps can accommodate jar sizes up to 107mm O

Thermal Expansion:                           6

Unprecedented mechanical strength

-Size: (LxWxT) 20 mm x 15 mm x 0